MAM2009_Invited talks

KEYNOTE
O. Joubert LTM, France		"The place of new materials and processes"

INVITED TALKS
		3D Integration, Passive, Packaging
L. Di cioccio CEA-LETI Minatec, France		"Physics of direct bonding : applications to heterogeneous or monolithic integration"

X. Gagnard STMicroelectronics,France		"Through Silicon Via: from the CMOS Imager Sensor Wafer Level Packaged to the 3D integration scheme"
		Nanostructures
M. Nihei MIRAI-Selete /Fujitsu Laboratories Ltd., Japan		"Integration of carbon nanotubes for LSI via interconnects"
		Memories
S. Lombardo IMM, Italy		GST films for PC RAM

M. Alessandri NUMONIX, Italy		Non Volatile Memories
		Silicides
C. Detavernier University of Gent, Belgium		"Hexagonal theta nickel silicide : an unexpected phase in the Ni-Si system"
		Contact / Metal Gate
A. C. Diebold CNSE, NanoTech, Albany, US
		Cu Interconnect Integration
K. Schulze TU Chemnizt, Germany		Air gaps integration

C. Witt AMD, US		Stress in Cu thin films
		Metal Process
Zs. Tokei IMEC, Belgium		Interconnect reliability
		Materials Properties at Nanoscale
C. Volkert Univ. Göttingen, Germany		Mechanical testing of metal nanowires
		Simulation & Modeling
K. Banerjee Univ. of California-Santa Barbara, US		Needs for innovative technologies
		Dielectrics
JJ. Vlassack Harvard University, US		ULK mechanical properties

KEYNOTE