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KEYNOTE

O. Joubert
LTM, France
  "Challenges and future prospects in plasma etching processes"
 

INVITED TALKS

  3D Integration, Passive devices & Packaging
L. Di cioccio
CEA-LETI Minatec, France
  "Physics of direct bonding : applications to heterogeneous or monolithic integration"
 
X. Gagnard
STMicroelectronics,France
  "Through Silicon Via: from the CMOS Imager Sensor Wafer Level Packaged to the 3D integration scheme"
 
Nanostructures
K. Banerjee
Univ. of California-Santa Barbara, US
  "Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects"
 
M. Nihei
MIRAI-Selete /Fujitsu Laboratories Ltd., Japan
  "Integration of carbon nanotubes for LSI via interconnects"

Memory devices
S. Lombardo
IMM, Italy
  "Amorphous - polycrystalline fcc transition in Ge2Sb2Te5 thin films"
 
M. Alessandri
NUMONIX, Italy
  "Rare-earth based high-k materials for NVM applications"
 
Silicides
C. Detavernier
University of Gent, Belgium
  "Hexagonal theta nickel silicide : an unexpected phase in the Ni-Si syste"
 
A. C. Diebold
CNSE, NanoTech, Albany, US
  "Advanced Optical Measurements for Advanced Transistor Processes"
 
Cu Interconnect Integration
K. Schulze
TU Chemnizt, Germany
  "Airgap Integration: Fabrication by Sacrificial Etch, Thermal and Mechanical Behavior, Reliability"
 
Metal Process
D. Galpin
STMicroelectronics, Crolles, France
  "Scalability of Trench First Metal Hard Mask Dual Damascene Architecture"
 
Reliability
Zs. Tokei
IMEC, Belgium
  "Reliability of copper low-k interconnects"
 
Advanced characterization and materials properties at the nanoscale
GIANOLA D. S.
Forschungszentrum Karlsruhe, Germany
  "Mechanical Testing of Quasi-1D Metal Nanostructures"
 
Dielectrics
JJ. Vlassack
Harvard University, US
  "Ultra Low Permittivity Organosilicate Glass Coatings : Mechanical Properties and Fracture behavior"